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Manufacturer Part #

IPN80R4K5P7ATMA1

Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 1920
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 4.5Ω
Rated Power Dissipation: 6W
Qg Gate Charge: 4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 1.5A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 60ns
Rise Time: 15ns
Fall Time: 80ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 80pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
3,015
USA:
3,015
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.60
USD
Quantity
Web Price
1
$0.60
50
$0.435
100
$0.41
500
$0.36
1,500+
$0.33