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Manufacturer Part #
IRF3007PBF
Single N-Channel 75 V 12.6 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:50 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification
Shipping Information:
ECCN:
PCN Information:
Change Description:Capacity extension with introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME), China for TO220 3L MOSFET products in Gen 5.X/7.X/10.X (up to Hex 4.4). Reason: Expansion of assembly and final test production to assure continuity of supply and enable flexible manufacturing.
Detailed Change Information: Change of lot number format in bar code labelling and marking of physical units affecting TDSON, TO220, TO247, TO252, TO263, and TSDSON at ASE (WEI HAI), INC. Reason: Standardization of International Rectifier (IR) Legacy products with Infineon Technologies (IFX) lot number nomenclature format.
Product Lifecycle:
Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 75V |
| Drain-Source On Resistance-Max: | 12.6mΩ |
| Rated Power Dissipation: | 200|W |
| Qg Gate Charge: | 130nC |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
50 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole
