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Manufacturer Part #

IRF520NSTRLPBF

Single N-Channel 100 V 0.2 Ohm 25 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2043
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.2Ω
Rated Power Dissipation: 3.8W
Qg Gate Charge: 25nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9.7A
Turn-on Delay Time: 4.5ns
Turn-off Delay Time: 32ns
Rise Time: 23ns
Fall Time: 23ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 4.83mm
Length: 10.67mm
Input Capacitance: 330pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$448.00
USD
Quantity
Web Price
800
$0.56
1,600
$0.47
3,200
$0.465
4,000
$0.46
12,000+
$0.45
Product Variant Information section