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Manufacturer Part #

IRF5210STRRPBF

Single P-Channel 100V 60 mOhm 150 nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 3.1W
Qg Gate Charge: 150nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 38A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 72ns
Rise Time: 63ns
Fall Time: 55ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 2780pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,168.00
USD
Quantity
Web Price
800
$1.46
1,600
$1.19
2,400
$1.18
3,200+
$1.17
Product Variant Information section