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Manufacturer Part #

IRF530A

N-Channel 100 V 0.11 Ohm Flange Mount Advanced Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 0.11Ω
Rated Power Dissipation: 55|W
Qg Gate Charge: 36nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Flange Mount
Features & Applications

The IRF530A is a N-Channel 100 V 0.11 Ohm Advanced Power Mosfet.

Features:

  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • 175 Operating Temperature
  • Lower Leakage Current : 10 A (Max.) @ VDS = 100V
  • Lower RDS(ON) : 0.092 (Typ.)

Applications:

  • TBA
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
1000
Total
$1,220.00
USD
Quantity
Web Price
1,000
$0.645
2,000
$0.61
3,000
$0.58
4,000
$0.555
5,000+
$0.525
Product Variant Information section