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Manufacturer Part #

IRF640NSTRRPBF

Single N-Channel 200 V 0.15 Ohm 67nC HEXFET® Power Mosfet - D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 0.15Ω
Rated Power Dissipation: 150|W
Qg Gate Charge: 67nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$596.00
USD
Quantity
Web Price
800
$0.745
1,600
$0.61
2,400
$0.605
3,200
$0.60
4,000+
$0.595
Product Variant Information section