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Manufacturer Part #

IRF6646TRPBF

Single N-Channel 80 V 9.5 mOhm 50 nC HEXFET® Power Mosfet - DirectFET®

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2021
Product Specification Section
Infineon IRF6646TRPBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 9.5mΩ
Rated Power Dissipation: 2.8W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 31ns
Rise Time: 20ns
Fall Time: 12ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4.9V
Technology: Si
Height - Max: 0.676mm
Length: 6.35mm
Input Capacitance: 2060pF
Package Style:  DIRECTFET
Mounting Method: Surface Mount
Pricing Section
Global Stock:
129,600
USA:
129,600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
4800
Multiple Of:
4800
Total
$32,256.00
USD
Quantity
Web Price
4,800+
$6.72
Product Variant Information section