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Manufacturer Part #

IRF7455TRPBF

Single N-Channel 30 V 0.02 Ohm 56 nC HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 7.5mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 37nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 15A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 51ns
Rise Time: 18ns
Fall Time: 44ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Input Capacitance: 3480pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,320.00
USD
Quantity
Web Price
4,000
$0.58
8,000+
$0.465
Product Variant Information section