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Manufacturer Part #

IRF7509TRPBF

Dual N/P-Channel 30 V 0.175/0.4 Ohm 12/11 nC HEXFET® Power Mosfet - MICRO-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2047
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -30V/30V
Drain-Source On Resistance-Max: 0.175Ω/0.4Ω
Rated Power Dissipation: 1.25W
Qg Gate Charge: 12nC/11nC
Gate-Source Voltage-Max [Vgss]: -20V/20V
Drain Current: -2A/2.7A
Turn-on Delay Time: 4.7ns/9.7ns
Turn-off Delay Time: 12ns/19ns
Rise Time: 10ns/12ns
Fall Time: 5.3ns/9.3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -1V/1V
Technology: Generation V
Height - Max: 1.11mm
Length: 3.05mm
Input Capacitance: 210pF/180pF
Package Style:  MICRO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
12,000
USA:
12,000
8,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
47 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$2,180.00
USD
Quantity
Web Price
4,000
$0.545
8,000+
$0.435
Product Variant Information section