Manufacturer Part #
Single N-Channel 100 V 4.5 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3
|Standard Pkg:|| |
Product Variant Information section
50 per Tube
Change Description:Capacity extension with introduction of an additional assembly and final test location at Huayi Microelectronics Co., Ltd (HYME), China for TO220 3L MOSFET products in Gen 5.X/7.X/10.X (up to Hex 4.4). Reason: Expansion of assembly and final test production to assure continuity of supply and enable flexible manufacturing.
Removal of label on tube affecting TO packages from legacy IR and packed at all subcon partners .Standardization of legacy IR products with Infineon Technologies (IFX) packing. Reason: This change will apply to all IFX subcon partners. However, parts coming from Rectificadores Internacionales, S.A. de C.V., Tijuana , Mexico (IRMX) will continue to have the tube label. This will be implemented in multiple phase as subcon partners implement the change in their manufacturing facilities. During this duration, there will be situation that customers will receive shipments with and without labels as we cannot remove all labels in all existing inventories. Infineon does not see any negative impact on quality, function and reliability as it is only standardization of packing.
|Drain-to-Source Voltage [Vdss]:||100V|
|Drain-Source On Resistance-Max:||4.5mΩ|
|Rated Power Dissipation:||370|W|
|Qg Gate Charge:||150nC|
|Package Style:||TO-220-3 (TO-220AB)|
|Mounting Method:||Through Hole|
50 per Tube