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Manufacturer Part #

IRFB4110GPBF

Single N-Channel 100 V 4.5 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3

Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 4.5mΩ
Rated Power Dissipation: 370|W
Qg Gate Charge: 150nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,630.00
USD
Quantity
Web Price
50
$1.96
200
$1.68
500
$1.63
1,250
$1.59
2,000+
$1.57
Product Variant Information section