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Manufacturer Part #

IRFP4468PBF

Single N-Channel 100 V 2.6 mOhm 540 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code:
Product Specification Section
Infineon IRFP4468PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 2.6mΩ
Rated Power Dissipation: 520W
Qg Gate Charge: 540nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 290A
Turn-on Delay Time: 52ns
Turn-off Delay Time: 160ns
Rise Time: 230ns
Fall Time: 260ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 20.7mm
Length: 15.87mm
Input Capacitance: 19860pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
150
Multiple Of:
25
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$832.50
USD
Quantity
Web Price
25
$5.61
75
$5.57
125
$5.55
500
$5.50
750+
$5.47