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Manufacturer Part #

IRFR9024NTRPBF

Single P-Channel 55V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3

Product Specification Section
Infineon IRFR9024NTRPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.175Ω
Rated Power Dissipation: 38W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 11A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 23ns
Rise Time: 55ns
Fall Time: 37ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Height - Max: 2.39mm
Length: 6.73mm
Input Capacitance: 350pF
Package Style:  TO-252AA
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
10 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$610.00
USD
Quantity
Web Price
1
$0.41
15
$0.365
50
$0.35
250
$0.33
1,000+
$0.305