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Manufacturer Part #


N-Channel 20 V 0.045 Ohm Surface Mount HEXFET Power Mosfet - Micro3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Date Code: 1911
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.08Ω
Rated Power Dissipation: 1.25W
Qg Gate Charge: 12nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 4.2A
Turn-on Delay Time: 7.5ns
Turn-off Delay Time: 54ns
Rise Time: 10ns
Fall Time: 26ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.2V
Technology: Si
Height - Max: 1.12mm
Length: 3.04mm
Input Capacitance: 740pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

The IRLML2502TRPBF is a 20 V single N-Channel Hexfet Power Mosfet, available in low profile Micro-3 package.

It utilizes a advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in many applications.

  • Ultra Low On-Resistance
  • N-Channel MOSFET
  • SOT-23 Footprint
  • Low Profile (<1.1mm)
  • Available in Tape and Reel
  • Fast Switching
  • Lead-Free
  • Halogen-Free


  • Battery
  • Load Management
  • Portable electronics
  • PCMCIA cards
Pricing Section
Global Stock:
Cost Per Unit
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Web Price:
$0.43 USD Each

$7.00 reeling fee is amortized over the number of components for each reel.
Mini-Reels are a custom product and are non-cancelable and non-returnable.