Manufacturer Part #
N-Channel 1600 V 40 A Flange Mount High Voltage BiMosFET - TO-247AD
|Standard Pkg:|| |
Product Variant Information section
30 per Tube
IXYS IXBH40N160 - Product Specification
SUBJECT: Assembled Device Marking Format Changes and Outer Box/Bag Label Format Changes - Change to the assembled device marking format The change affects the date code and tracking number identification. This change does not affect the form, fit or function of the product. See attached for more details - Change to the box label format: The paper sticker label found on the outer box or bag will see a format change that incorporates the Littelfuse logo along with the IXYS logo. The printed information remains the same (PN, Qty, Lot #, date code, country of origin). The change allows for a improved readability. This change does not affect the form, fit or function of the product. REMARKS: This changes from the original IXYS Corporation marking/labeling format to the new IXYS LLC-USA format is being done to conform to the SAP product management system requirements of our parent company Littelfuse Corporation.
We want to share with you a brief update on the Littelfuse power semiconductor manufacturing site in Lampertheim, Germany. The site recently experienced an electrical fire that occurred at the power distribution panel on the subfloor of the fab. All employees were safely evacuated, and the site has resumed some operations. The fire did not spread to the manufacturing floor, but this unforeseeable event will cause an interruption to our production. As a result of this incident, despite our urgent recovery actions, you will encounter approximately a 10 week delay to your current delivery schedule for our thyristors rectifier, and fast diodes, as well as any module that includes these components. We sincerely apologize for the inconvenience. Your Littelfuse Customer Service Representative will make the necessary adjustments to your order and also contact you if there are any further changes to this schedule. Please understand that our entire global team is diligently working to resolve this issue as fast as possible to minimize your disruption.
Littelfuse would like to inform you about a future backend change for selected discrete IGBTs and MOSFETs. This change is a part of the consolidation effort for the backend manufacturing which will lead to improve delivery time.The qualification of this new backend manufacturing facility is expected to finish by the end of Q3/ 2021. The Country of Origin (CoO) will be China.
IXYS IXBH40N160 - Technical Attributes
|Rated Power Dissipation:||350|W|
|Qg Gate Charge:||130nC|
|Mounting Method:||Through Hole|
30 per Tube