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Manufacturer Part #


Single P-Channel 600 V 1 Ohm 300 W Through Hole Power Mosfet - TO-247 AD

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Mfr. Name: IXYS
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Product Specification Section
IXYS IXTH10P60 - Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 300|W
Qg Gate Charge: 160nC
Package Style:  TO-247AD
Mounting Method: Flange Mount
$Features & Applications

IXYS is a state of the art leader in MOSFET technology through the IXTH series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.

The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.

By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.

Perfect for both commercial and industrial applications, the IXTH10P60 (this part is lead free) has the capacity to operate at -600 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 1 Ohms). Avalanche rated, the IXTH10P60 is able to reduce power dissipation levels to approximately 300 watts. The IXTH10P60 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.

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48 Weeks
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