The website is experiencing performance issues. We are working to resolve them as quickly as possible.
NEW! Free shipping over $50 USD. Learn more
Manufacturer Part #
IXTH10P60
Single P-Channel 600 V 1 Ohm 300 W Through Hole Power Mosfet - TO-247 AD
| | |||||||||||
| | |||||||||||
| Mfr. Name: | IXYS | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:30 per Tube Package Style:TO-247AD Mounting Method:Flange Mount | ||||||||||
| Date Code: | |||||||||||
IXYS IXTH10P60 - Product Specification
Shipping Information:
ECCN:
PCN Information:
DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint, it has been decided to introduce a new TO-247 backend manufacturing ASEWH in China for the affected part numbers listed below. With this additional capacity to support the upcoming customer demands. Country of origin for TO247 will possibly be Korea, Philippines and China
Product Change Notification for Littelfuse MOSFET DISCRETE, IGBT DISCRETE, Thyristor and Diodes in TO-247 package add new manufacturing location DESCRIPTION OF CHANGE: As a part of Littelfuse endeavors to improve the manufacturing footprint, it has been decided to introduce a new TO-247 backend manufacturing ASEWH in China for the affected part numbers listed attached. With this additional capacity to support the upcoming customer demands. Country of origin for TO247 will possibly be Korea, Philippines and China Form, fit, function changes: No change in the silicon dice used. We would like to notify you on the differences between the existing manufacture and new manufacture.
This is an advisory notice of an upcoming change of the Epoxy Molding Compound (EMC) material used in various discrete power and IC packages. As you maybe aware, Samsung SDI has decided to exit the EMC material business and as a result we are well advanced in qualifying new materials from alternative vendors. In most instances we are using materials that we have already qualified for similar applications and as such we expecting this to be a relatively low risk exercise. As this affects several different technology / package combinations and will result in a number of individual PCNs, we are providing this advanced overview such that we can work with you as far as possible to minimise the impact and disruption to your business of this upcoming change. Appendix to this notice you will find a detailed list of part numbers affected (an electronic copy is available on request). Individual PCNs will follow in the usual manner and we will do our utmost to release these in logical, concise groups. In the first instance, we would kindly ask you to review the information and address any questions and any specific individual needs to your usual Sales Contact.
This is an advisory notice of an upcoming change of the Epoxy Molding Compound (EMC) material used in various discrete power and IC packages. As you maybe aware, Samsung SDI has decided to exit the EMC material business and as a result we are well advanced in qualifying new materials from alternative vendors. In most instances we are using materials that we have already qualified for similar applications and as such we expecting this to be a relatively low risk exercise.
Part Status:
IXYS IXTH10P60 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 1Ω |
| Rated Power Dissipation: | 300|W |
| Qg Gate Charge: | 160nC |
| Package Style: | TO-247AD |
| Mounting Method: | Flange Mount |
$Features & Applications
IXYS is a state of the art leader in MOSFET technology through the IXTH series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXTH10P60 (this part is lead free) has the capacity to operate at -600 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 1 Ohms). Avalanche rated, the IXTH10P60 is able to reduce power dissipation levels to approximately 300 watts. The IXTH10P60 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.
Available Packaging
Package Qty:
30 per Tube
Package Style:
TO-247AD
Mounting Method:
Flange Mount