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Manufacturer Part #

IXTH26N60P

N-Channel 600 V 270 mOhm Enhancement Mode Power MOSFET - TO-247

Mfr. Name: IXYS
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 270mΩ
Rated Power Dissipation: 460|W
Qg Gate Charge: 72nC
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The IXTH26N60P is a 600 V 26 A N-Channel Enchancement Mode Power MOSFET available in TO-247-3 Package.

Features:

  • Fast Recovery diode
  • Unclamped Inductive Switching (UIS) rated
  • International standard packages
  • Low package inductance - easy to drive and to protect

Advantages:

  • Easy to Mount
  • Space Savings
  • High Power Density
Pricing Section
Stock:
0
Minimum Order:
300
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,803.00
USD
Quantity
Web Price
30
$7.09
90
$6.12
150
$6.01
600
$5.75
900+
$5.67
Product Variant Information section