Manufacturer Part #
Single N-Channel 250 V 84 mOhm 300 W Power Mosfet - TO-220
|Drain-to-Source Voltage [Vdss]:||250V|
|Drain-Source On Resistance-Max:||84mΩ|
|Rated Power Dissipation:||300|W|
|Qg Gate Charge:||70nC|
|Mounting Method:||Through Hole|
Features & Applications
IXYS is a state of the art leader in MOSFET technology through the IXTP series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXTP42N25P (this part is lead free) has the capacity to operate at 250 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 0.084 Ohms). Avalanche rated, the IXTP42N25P is able to reduce power dissipation levels to approximately 300 watts. The IXTP42N25P provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-220 package format.