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Manufacturer Part #

NDS332P

P-Channel 20V 0.3Ω SMT Enhancement Mode Field Effect Transistor SSOT-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.3Ω
Rated Power Dissipation: 0.46|W
Qg Gate Charge: 5nC
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications
The NDS332P is a Part of NDS Series P-Channel logic level enhancement mode power field effect transistors are produced using, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Features:

  • -1 A, -20 V,
  • RDS(ON) = 0.41Ω @ VGS= -2.7 V
  • RDS(ON) = 0.3 Ω @ VGS = -4.5 V
  • Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) 1.0V
  • Proprietary package design using copper lead frame for superior thermal and electrical capabilities
  • High density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC current capability
  • Compact industry standard SOT-23 surface Mount package

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
    Pricing Section
    Stock:
    852,000
    Minimum Order:
    3,000
    Multiple Of:
    3,000
    45,000
    Factory Stock:Factory Stock:
    0
    Factory Lead Time:
    N/A
    Total
    $257.10
    USD
    Quantity
    Web Price
    3,000
    $0.0857
    9,000
    $0.0829
    15,000
    $0.0827
    30,000
    $0.0825
    60,000+
    $0.0823