text.skipToContent text.skipToNavigation

Manufacturer Part #

NDT014

N-Channel 60 V 0.2 Ω SMT Enhancement Mode Field Effect Transistor SOT-223

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.2Ω
Rated Power Dissipation: 1.1|W
Qg Gate Charge: 11nC
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Features & Applications

The NDT014 is a Power SOT N-Channel enhancement mode power field effect transistors are produced using, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

Features:

  • 2.7 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 10 V
  • High density cell design for extremely low RDS(ON)
  • High power and current handling capability in a widely used surface mount package

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Stock:
0
Minimum Order:
4,000
Multiple Of:
4,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$860.00
USD
Quantity
Web Price
4,000
$0.215
8,000
$0.175
12,000
$0.173
16,000+
$0.172
Product Variant Information section