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Manufacturer Part #

NTBG045N065SC1

NTBG045N065SC1 Series N-Channel 650 V 50 mOhm Silicon Carbide MOSFET - D2PAK-7

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NTBG045N065SC1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 50mΩ
Rated Power Dissipation: 242W
Qg Gate Charge: 105nC
Gate-Source Voltage-Max [Vgss]: 22V
Drain Current: 62A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 26ns
Rise Time: 14ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.8V
Technology: SiC
Input Capacitance: 1890pF
Package Style:  D2PAK-7
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
6 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$6,632.00
USD
Quantity
Web Price
800+
$8.29
Product Variant Information section