
Manufacturer Part #
NTBG045N065SC1
NTBG045N065SC1 Series N-Channel 650 V 50 mOhm Silicon Carbide MOSFET - D2PAK-7
Product Specification Section
onsemi NTBG045N065SC1 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NTBG045N065SC1 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 50mΩ |
Rated Power Dissipation: | 242W |
Qg Gate Charge: | 105nC |
Gate-Source Voltage-Max [Vgss]: | 22V |
Drain Current: | 62A |
Turn-on Delay Time: | 13ns |
Turn-off Delay Time: | 26ns |
Rise Time: | 14ns |
Fall Time: | 7ns |
Operating Temp Range: | -55°C to +175°C |
Gate Source Threshold: | 2.8V |
Technology: | SiC |
Input Capacitance: | 1890pF |
Package Style: | D2PAK-7 |
Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Web Price
800+
$8.29
Product Variant Information section
Available Packaging
Package Qty:
800 per Reel
Package Style:
D2PAK-7
Mounting Method:
Surface Mount