
Manufacturer Part #
NTJD4152PT1G
Dual P-Channel 20 V 215 mOhm 272 mW Surface Mount Small Signal MOSFET SOT-363
Product Specification Section
Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Technical Attributes
Attributes Table
Fet Type: | Dual P-Ch |
Drain-to-Source Voltage [Vdss]: | 20V |
Drain-Source On Resistance-Max: | 215mΩ |
Rated Power Dissipation: | 0.27|W |
Qg Gate Charge: | 2.2nC |
Package Style: | SOT-363 (SC-70-6, SC-88) |
Mounting Method: | Surface Mount |
Features & Applications
The NTJD4152PT1G is a part of NTJD4152P series dual P−channel MOSFET. It has a storage temperature ranging from -55°C to +150°C and its available in SOT-363 package.
Features:
- Leading Trench Technology for Low RDS(ON) Performance
- Small Footprint Package (SC70−6 Equivalent)
- ESD Protected Gate
- This is a Pb−Free Device
Applications:
- Load/Power Management
- Charging Circuits
- Load Switching
- Cell Phones, Computing, Digital Cameras, MP3s and PDAs
Pricing Section
Global Stock:
342,171
USA:
342,171
On Order:
0
Factory Lead Time:
44 Weeks
Quantity
Web Price
1
$0.47
50
$0.225
100
$0.195
500
$0.144
1,500+
$0.117
Product Variant Information section
Available Packaging
Package Qty:
3000 per
Package Style:
SOT-363 (SC-70-6, SC-88)
Mounting Method:
Surface Mount