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Manufacturer Part #

NVHL080N120SC1

N-Channel 1200 V 31 A 110 mohm Through Hole MOSFET - TO-247-3

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1925
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 110mΩ
Rated Power Dissipation: 178W
Qg Gate Charge: 56nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 31A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 22ns
Rise Time: 20ns
Fall Time: 10ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.7V
Technology: SiC
Input Capacitance: 1112pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
450
Multiple Of:
30
Total
$10,215.00
USD
Quantity
Web Price
30+
$22.70
Product Variant Information section