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Manufacturer Part #

PMGD280UN,115

Dual N-Channel 20 V 660 mOhm 0.89 nC 0.4 W Surface Mount MOSFET - SOT-363

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 1848
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 660mΩ
Rated Power Dissipation: 0.4W
Qg Gate Charge: 0.89nC
Gate-Source Voltage-Max [Vgss]: 8V
Drain Current: 0.87A
Turn-on Delay Time: 4.5ns
Turn-off Delay Time: 18.5ns
Rise Time: 10ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1V
Technology: Si
Height - Max: 1.1mm
Length: 2.2mm
Input Capacitance: 45pF
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Features:

  • Surface mounted package
  • Footprint 40% smaller than SOT23
  • Dual device
  • Fast switching
  • Low on-state resistance
  • Low threshold voltage

Applications:

  • Driver circuits
  • Switching in portable appliances
Pricing Section
Global Stock:
0
USA:
0
60,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
3000
Multiple Of:
3000
Total
$483.00
USD
Quantity
Web Price
3,000
$0.161
6,000
$0.134
9,000
$0.132
15,000
$0.131
30,000+
$0.129
Product Variant Information section