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Nexperia | PMGD290UCEAH

Manufacturer Part #

PMGD290UCEAH

Series 20 V 320 mW 0.68/1.14 nC Dual N/P-Channel MOSFET - TSSOP-6

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code: 2521
Product Specification Section
Nexperia PMGD290UCEAH - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 380 mΩ/ 620mΩ
Rated Power Dissipation: 445mW
Qg Gate Charge: 0.45 nC/ 0.15nC
Gate-Source Voltage-Max [Vgss]: 12V
Drain Current: 725 mA/ 500mA
Turn-on Delay Time: 6ns
Turn-off Delay Time: 86ns
Rise Time: 4ns
Fall Time: 31ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 0.75V
Input Capacitance: 55pF
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
27,000
USA:
27,000
On Order:Order inventroy details
45,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,080.00
USD
Quantity
Unit Price
3,000
$0.36
6,000
$0.355
12,000
$0.35
15,000+
$0.345
Product Variant Information section