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Manufacturer Part #

PMPB215ENEA/FX

PMPB215ENEA Series 80 V 230 mOhm N-Channel TrenchMOS FET - DFN-2020MD-6

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 230mΩ
Rated Power Dissipation: 1.6|W
Qg Gate Charge: 4.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.8A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 9.5ns
Rise Time: 2ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.7V
Height - Max: 0.65mm
Length: 2.1mm
Input Capacitance: 215pF
Package Style:  SOT-1220
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
6000
Multiple Of:
3000
Total
$1,860.00
USD
Quantity
Web Price
3,000
$0.325
6,000
$0.31
9,000
$0.295
12,000+
$0.28
Product Variant Information section