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Manufacturer Part #

PSMN1R9-40YSBX

N-Channel 40 V 200 A 194 W 1.9 mOhm SMT Standard Level MOSFET - Power-SO8

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Nexperia PSMN1R9-40YSBX - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.9mΩ
Rated Power Dissipation: 194W
Qg Gate Charge: 78nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 200A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 33ns
Rise Time: 11ns
Fall Time: 13ns
Operating Temp Range: -55°C to +125°C
Gate Source Threshold: 3.6V
Technology: Si
Input Capacitance: 6297pF
Package Style:  POWERSO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1500
Multiple Of:
1500
Total
$870.00
USD
Quantity
Web Price
1,500
$0.58
3,000
$0.565
4,500
$0.56
6,000
$0.555
7,500+
$0.54
Product Variant Information section