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Manufacturer Part #

SCT10N120

N-Channel 1200 V 520 mΩ 22 nC Silicon Carbide power Mosfet - HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1728
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 690mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 22nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 12A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 14ns
Rise Time: 17ns
Fall Time: 12ns
Operating Temp Range: -55°C to +200°C
Gate Source Threshold: 3.5V
Technology: SiC
Input Capacitance: 290pF
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
1
Multiple Of:
1
Total
$8.45
USD
Quantity
Web Price
1
$8.45
10
$7.28
30
$6.78
100
$6.27
250+
$5.91
Product Variant Information section