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Manufacturer Part #

SCT20N120

N-Channel 1200 V 290 mΩ 20 A Flange Mount Silicon Carbide Power Mosfet - HiP247™

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Date Code: 2101
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 239mΩ
Rated Power Dissipation: 175W
Qg Gate Charge: 45nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 20A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 27ns
Rise Time: 17ns
Fall Time: 16ns
Operating Temp Range: -55°C to +200°C
Gate Source Threshold: 3.5V
Technology: SiC
Input Capacitance: 650pF
Mounting Method: Through Hole
Pricing Section
Global Stock:
373
USA:
373
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
1
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$17.25
USD
Quantity
Web Price
1
$17.25
5
$16.06
25
$14.95
50
$14.49
150+
$13.80