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Manufacturer Part #

SCT3080ALGC11

SCT3080AL Series 650 V 30 A 104 mOhm N-Channel SiC Power Mosfet - TO-247N

ECAD Model:
Mfr. Name: ROHM
Standard Pkg:
Date Code:
Product Specification Section
ROHM SCT3080ALGC11 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 104mΩ
Rated Power Dissipation: 134|W
Qg Gate Charge: 48nC
Gate-Source Voltage-Max [Vgss]: 22V
Drain Current: 30A
Turn-on Delay Time: 16ns
Turn-off Delay Time: 27ns
Rise Time: 26ns
Fall Time: 16ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 5.6V
Height - Max: 21mm
Length: 16mm
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
1,170
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$458.10
USD
Quantity
Web Price
30
$15.27
60
$15.19
90
$15.14
150
$15.08
300+
$14.94