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Manufacturer Part #

SCT30N120

Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247

Product Specification Section
STMicroelectronics SCT30N120 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 100mΩ
Rated Power Dissipation: 270W
Qg Gate Charge: 105nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 45A
Turn-on Delay Time: 19ns
Turn-off Delay Time: 45ns
Rise Time: 20ns
Fall Time: 28ns
Operating Temp Range: -55°C to +200°C
Gate Source Threshold: 3.5V
Technology: SiC
Height - Max: 20.15mm
Length: 15.75mm
Input Capacitance: 1700pF
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
600
Multiple Of:
30
Total
$9,714.00
USD
Quantity
Web Price
1
$17.00
5
$16.78
25
$16.56
50
$16.47
150+
$16.19