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Manufacturer Part #

SCT50N120

N-Channel 1200 V 59 mΩ 122 nC Silicon Carbide Power Mosfet - HiP247

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1920
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 69mΩ
Rated Power Dissipation: 318|W
Qg Gate Charge: 122nC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
30 Weeks
Minimum Order:
600
Multiple Of:
30
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$15,822.00
USD
Quantity
Web Price
1+
$26.37
Product Variant Information section