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Manufacturer Part #

SCTW90N65G2V

N-Channel 650 V 24 mOhm 565 W Through Hole Silicon Power Mosfet - HiP-247

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 565W
Qg Gate Charge: 157nC
Gate-Source Voltage-Max [Vgss]: 22V
Drain Current: 119A
Turn-on Delay Time: 26ns
Turn-off Delay Time: 58ns
Rise Time: 16ns
Fall Time: 38ns
Operating Temp Range: -55°C to +200°C
Gate Source Threshold: 3.2V
Technology: SiC
Input Capacitance: 3380pF
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
600
Multiple Of:
600
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$10,842.00
USD
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Quantity
Web Price
1
$22.59
5
$20.97
20
$19.67
50
$18.85
125+
$18.07
Product Variant Information section