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Manufacturer Part #

SI1013R-T1-GE3

Single P-Channel 20 V 1.2 Ohm Surface Mount Power Mosfet - SC-75A

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 1.2Ω
Rated Power Dissipation: 150|mW
Qg Gate Charge: 1.5nC
Mounting Method: Surface Mount
Features & Applications
The SI1013R-T1-GE3 is a P-Channel 1.8 V (G-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a SC-75A package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • High-Side Switching
  • Low On-Resistance: 1.2 
  • Low Threshold: 0.8 V (Typ.)
  • Fast Switching Speed: 14 ns
  • 1.8 V Operation
  • TrenchFET® Power MOSFETs
  • 2000 V ESD Protection
  • Compliant to RoHS Directive 2002/95/EC

Benefits:

  • Ease in Driving Switches
  • Low Offset (Error) Voltage
  • Low-Voltage Operation
  • High-Speed Circuits
  • Low Battery Voltage Operation

Applications:

  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
Pricing Section
Stock:
0
Minimum Order:
3,000
Multiple Of:
3,000
309,000
Factory Stock:Factory Stock:
1,947,000
Factory Lead Time:
12 Weeks
Total
$477.00
USD
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Quantity
Web Price
3,000
$0.159
6,000
$0.13
9,000
$0.129
12,000
$0.128
15,000+
$0.127