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Manufacturer Part #
SI2323DS-T1-E3
Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Package Style:SOT-23 (SC-59,TO-236) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 1901 | ||||||||||
Product Specification
Shipping Information:
ECCN:
PCN Information:
As part of the Vishay Siliconix commitment to delivering customers with reliable and cost-effective products, we are announcing the expansion of assembly and test capacity in our trade-friendly facility in Kaohsiung, Taiwan on selected LVM Power MOSFETs. The package types included are the TSOP6 and SSOT23. Power MOSFETs shipped from this facility will be tariff-free. This advisory is intended for US based customers and orders.To take advantage of this tariff-free initiative, customers will need to order the parts with a new ordering prefix code�_BE3� (instead of our standard _GE3). The table showing the current and new ordering codes can be found on page 2, 3 and 4 of this document.
Vishay Siliconix Announces Additional Conversion to Copper Bondwire for Commercial Power MOSFETs DESCRIPTION OF CHANGE: Vishay Siliconix announces the qualification for production of SSOT23 halogen-free commercial Low Voltage MOSFETs with copper bond-wire. Manufacturing of this Low Voltage MOSFET package with Copper wire will add to Vishay Siliconix Copper wire product families in production since November 2007. REASON FOR CHANGE: Part of continued quality improvement program.
Product Lifecycle:
Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 0.039Ω |
| Rated Power Dissipation: | 0.75|W |
| Qg Gate Charge: | 19nC |
| Package Style: | SOT-23 (SC-59,TO-236) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
3000 per
Package Style:
SOT-23 (SC-59,TO-236)
Mounting Method:
Surface Mount
