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Manufacturer Part #

SI2365EDS-T1-GE3

MOSFET P-CH 20V 5.9A TO-236

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 32mΩ
Rated Power Dissipation: 1.17|W
Qg Gate Charge: 23.8nC
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Stock:
8,981
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Total
$0.38
USD
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Quantity
Web Price
1
$0.38
50
$0.184
100
$0.162
500
$0.12
1,500+
$0.0978