Order by 9pm EDT to ship same day
NEW! Free shipping over $50 USD ($100 CAD). Learn more
Manufacturer Part #
SI4136DY-T1-GE3
N-CH MOSFET SO-8 BWL 20V 2.5MOHM @10V - LEAD(PB) AND HALOGEN FREE
| | |||||||||||
| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:SOIC-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification
Shipping Information:
ECCN:
PCN Information:
Additional Commercial Power MOSFET Wafer Fabrication Capacity DESCRIPTION OF CHANGE: To meet increasing demand for Low Voltage Power MOSFET products, Vishay Siliconix has completed qualification for the expansion of commercial Low Voltage MOSFET 8-inch wafer capacity to foundry partner Tower-Jazz located in San Antonio, Texas. Tower-Jazz is a wholly-owned subsidiary of Tower Semiconductor, Ltd. The 80,000 square-foot clean-room facility was opened by Maxim Integrated in 2008, and will retain highly-skilled production personnel, quality systems and integration engineering currently supporting Maxim and Vishay. The Tower Texas facility supports advanced analog platforms for die geometries with feature sizes down to 130nm.
Product Lifecycle:
Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 20V |
| Drain-Source On Resistance-Max: | 2mΩ |
| Rated Power Dissipation: | 7.8|W |
| Qg Gate Charge: | 73nC |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount
