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Manufacturer Part #

SI4442DY-T1-E3

30V N-CH @2.5V

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2040
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.0045Ω
Rated Power Dissipation: 1.6|W
Qg Gate Charge: 50nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications
The SI4442DY-T1-E3 is a N-Channel 30-V MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a SO-8 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Available
  • TrenchFET® Power MOSFETs: 2.5 V Rated
  • 100 % Rg Tested
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
2,500
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,700.00
USD
Quantity
Web Price
2,500+
$1.08
Product Variant Information section