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Manufacturer Part #

SIHB21N60EF-GE3

Single N-Channel 600 V 0.176 Ohm 84 nC 227 W Silicon Mosfet - TO-263-3

Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.176Ω
Rated Power Dissipation: 227W
Qg Gate Charge: 84nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 21A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 59ns
Rise Time: 31ns
Fall Time: 27ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 4.58mm
Length: 10.67mm
Input Capacitance: 2030pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
1,000
On Order:
0
Factory Stock:Factory Stock:
0
Total
$2,220.00
USD
Quantity
Web Price
1+
$2.22
Product Variant Information section