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Vishay | SIR5108DP-T1-RE3

Manufacturer Part #

SIR5108DP-T1-RE3

100V 55.9A 0.0105 Ohm N-ch PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2517
Product Specification Section
Vishay SIR5108DP-T1-RE3 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 10.5mΩ
Rated Power Dissipation: 5.2W
Qg Gate Charge: 14.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 15.4A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 16ns
Rise Time: 6ns
Fall Time: 7ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Input Capacitance: 1150pF
Series: TrenchFET Gen V
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
6,000
USA:
6,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
44 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$4,350.00
USD
Quantity
Unit Price
3,000+
$1.45
Product Variant Information section