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Manufacturer Part #

SIR570DP-T1-RE3

SiR570DP Series 150 V 7.9 mOhm 104 W 46.9 nC N-Channel TrenchMOS FET - PowerPAK SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SIR570DP-T1-RE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 7.9mΩ
Rated Power Dissipation: 104W
Qg Gate Charge: 46.9nC
Drain Current: 77.4A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 29ns
Rise Time: 16ns
Fall Time: 21ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: TrenchMOS
Input Capacitance: 3740pF
Series: SIR570DP
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
6,000
Factory Stock:Factory Stock:
0
Minimum Order:
3000
Multiple Of:
3000
Total
$3,360.00
USD
Quantity
Web Price
3,000+
$1.12
Product Variant Information section