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Manufacturer Part #

SIR608DP-T1-RE3

Single N-Channel 45V 1.2mOhm 6.25W SMT Power Mosfet - PowerPAK-SO-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
Vishay SIR608DP-T1-RE3 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 45V
Drain-Source On Resistance-Max: 1.2mΩ
Rated Power Dissipation: 6.25W
Qg Gate Charge: 167nC
Gate-Source Voltage-Max [Vgss]: 20V
Turn-on Delay Time: 52ns
Turn-off Delay Time: 50s
Rise Time: 86ns
Fall Time: 25s
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.3V
Technology: TrenchMOS
Length: 6.15mm
Input Capacitance: 8900pF
Series: TrenchFET® Gen IV
Mounting Method: Surface Mount
Pricing Section
Global Stock:
12,000
Germany (Online Only):
12,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
22 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$2,010.00
USD
Quantity
Web Price
3,000+
$0.67
Product Variant Information section