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Manufacturer Part #

SIRA04DP-T1-GE3

Single N-Channel 30 V 2.15 mOhm TrenchFET Gen IV Power Mosfet - PowerPAK SOIC-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.00215Ω
Rated Power Dissipation: 5|W
Qg Gate Charge: 51nC
Package Style:  POWERPAK-SO-8
Mounting Method: Surface Mount
Features & Applications

The SIRA04DP-T1-GE3 is a part of SIRA04DP series N-Channel MosFet. It has an operating temperature ranging from -55°C to +150°C and its available in SOIC-8 package.

Features:

  • Halogen-free According to IEC 61249-2-21 Definition
  • TrenchFET® Gen IV Power MOSFET
  • 100 % Rg and UIS Tested
  • Compliant to RoHS Directive 2002/95/EC
  • Drain-Source Voltage: 30 V
  • Maximum Power Dissipation: 17.7 W

Applications:

  • Switch Mode Power Supplies
  • Personal Computers and Servers
  • Telecom Bricks
  • VRM’s and POL
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
45 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,580.00
USD
Quantity
Web Price
3,000
$0.86
6,000+
$0.69
Product Variant Information section