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Manufacturer Part #

SISH108DN-T1-GE3

Single N-Channel 20 V 4.9 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 4.9mΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 16V
Drain Current: 14A
Turn-on Delay Time: 10ns
Turn-off Delay Time: 60ns
Rise Time: 10ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
3000
Multiple Of:
3000
Total
$735.00
USD
Quantity
Web Price
3,000
$0.245
6,000
$0.198
9,000
$0.196
12,000+
$0.195
Product Variant Information section