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Manufacturer Part #

SISH410DN-T1-GE3

Single N-Channel 20 V 4.8 mOhm SMT TrenchFET® Power Mosfet - PowerPAK 1212-8

Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 27nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 22A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 25ns
Rise Time: 10ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Input Capacitance: 1600pF
Package Style:  POWERPAK-1212-8
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
6,000
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Total
$2,550.00
USD
Quantity
Web Price
3,000+
$0.425
Product Variant Information section