Manufacturer Part #
SQ4431EY-T1_BE3
P-CHANNEL 30-V (D-S) 175C MOSFET
Vishay SQ4431EY-T1_BE3 - Product Specification
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Description of Change: As part of Vishay Siliconix commitment to Quality, we would like to extend to you a courtesy advisory notification of a datasheet revision for SQ4431EY (Doc #65527 Rev E attached). There is no change to the materials or processes used in the manufacture of this part.The changes per this Advisory reflect updates as follows:- Removed superscript “c” from feature list.- Removed superscript “a” from Maximum power dissipation parameter.- Changed chart label in page 4 from On-Resistance vs Junction Temperature to Drain Source Breakdown vs Junction Temperature.This advisory is for information only and there is no need for a response.Reason for Change: Datasheet Revision
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Vishay SQ4431EY-T1_BE3 - Technical Attributes
| Fet Type: | P-Ch |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Drain-Source On Resistance-Max: | 30mΩ |
| Rated Power Dissipation: | 6W |
| Qg Gate Charge: | 25nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 10.8A |
| Turn-on Delay Time: | 10ns |
| Turn-off Delay Time: | 33ns |
| Rise Time: | 12ns |
| Fall Time: | 15ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 2.5V |
| Input Capacitance: | 1265pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
SOIC-8
Mounting Method:
Surface Mount