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Manufacturer Part #
STB21N65M5
N-Channel 710 V 17 A 179 mOhm 125 W Surface Mount Power Mosfet - D2PAK
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| Mfr. Name: | STMicroelectronics | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) | ||||||||||
| Date Code: | 2047 | ||||||||||
Product Specification
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PCN Information:
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Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Drain-Source On Resistance-Max: | 150Ω |
| Rated Power Dissipation: | 125|W |
| Qg Gate Charge: | 50nC |
| Package Style: | TO-263-3 (D2PAK) |
Features & Applications
The STB21N65M5 is a N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET. These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure.
The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features:
- 100% avalanche tested
- Worldwide best RDS(on) * area
- Higher VDSS rating
- High dv/dt capability
- Excellent switching performance
Applications:
- Switching applications
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
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