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Manufacturer Part #

STD10P6F6

P-Channel 60 V 160 mΩ 6.4 nC SMT STripFET™ VI DeepGATE™ Mosfet -TO-252

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1840
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 160mΩ
Rated Power Dissipation: 35W
Qg Gate Charge: 6.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 64ns
Turn-off Delay Time: 14ns
Rise Time: 5.3ns
Fall Time: 3.7ns
Gate Source Threshold: 4V
Input Capacitance: 340pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
2,500
Multiple Of:
2,500
195,000
Factory Stock:Factory Stock:
0
Total
$812.50
USD
Quantity
Web Price
2,500
$0.325
5,000
$0.31
7,500
$0.295
10,000+
$0.28
Product Variant Information section