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Manufacturer Part #


N-Channel 60 V 0.07 Ohm Surface Mount STripFET™ II Power MosFet - TO-252-3

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 0.07Ω
Rated Power Dissipation: 40|W
Qg Gate Charge: 7.5nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The STD16NF06LT4 is a N-channel STripFET™ II power MOSFET with voltage of 60 V and power dissipation of 40 W. Available in a TO-252-3 package.

The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.


  • Logic level device
  • Low threshold drive
  • Drain-source voltage (VGS = 0): 60 V
  • VDGR Drain-gate voltage (RGS = 20 kΩ): 60 V
  • VGS Gate- source voltage: ± 18 V
  • ID Drain current (continuous) at TC = 25°C: 24 A


  • Switching application
Pricing Section
Web Price:
$0.685 USD Each
Cost Per Unit
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$7.00 reeling fee is amortized over the number of components for each reel.
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