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Manufacturer Part #

STP13NM60N

N-Channel 600 V 11 A 0.36 Ohm Flange Mount MDmesh™ II Power MOSFET-TO-220-3

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1815
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 360mΩ
Rated Power Dissipation: 90|W
Qg Gate Charge: 27nC
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications

The STP13NM50 devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Features:

  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance

Applications:

  • Switching applications
Pricing Section
Global Stock:
0
Germany (Online Only):
0
8,000
Factory Stock:Factory Stock:
0
Minimum Order:
1
Multiple Of:
1
Total
$1.12
USD
Quantity
Web Price
1
$1.12
50
$0.995
150
$0.96
500
$0.925
1,500+
$0.895
Product Variant Information section