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Manufacturer Part #

STP26N65DM2

N-channel 650 V 190 mOhm 170 W Through Hole MDmesh™ DM2 Power Mosfet - TO-220

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1903
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 190mΩ
Rated Power Dissipation: 170W
Qg Gate Charge: 35.5nC
Gate-Source Voltage-Max [Vgss]: 25V
Drain Current: 20A
Turn-on Delay Time: 17ns
Turn-off Delay Time: 51ns
Rise Time: 7ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: MDmesh
Input Capacitance: 1480pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1,000
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Total
$1,680.00
USD
Quantity
Web Price
50
$2.32
150
$1.84
250
$1.79
1,000
$1.68
1,500+
$1.65
Product Variant Information section